15 Credits AUTUMN

Aims/Description: The unit describes the basic structure of materials and their relationship to the requirements of semiconductor devices for future applications, leading to methods of crystal growth, fabrication, modelling and characterization. The focus is on devices that underpin CMOS and its future evolution in AI: starting with the MOSFET, and leading on to future devices such as TunnelFET, Negative Capacitance FET and the Resistive Random Access Memory (RERAM).

Staff Contact: MAIDEN ANDREW
Teaching Methods: Lectures, Laboratory work, Independent Study
Assessment: Formal Exam, Course work

Information on the department responsible for this unit (Electronic and Electrical Engineering):

Departmental Home Page
Teaching timetable


The content of our courses is reviewed annually to make sure it's up-to-date and relevant. Individual modules are occasionally updated or withdrawn. This is in response to discoveries through our world-leading research; funding changes; professional accreditation requirements; student or employer feedback; outcomes of reviews; and variations in staff or student numbers. In the event of any change we'll consult and inform students in good time and take reasonable steps to minimise disruption.

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Teaching methods and assessment displayed on this page are indicative for 2021-22. Students will be informed by the academic department of any changes made necessary by the ongoing pandemic.

Western Bank, Sheffield, S10 2TN, UK